11.–15. Juni 2018
Palais Hirsch, Schwetzingen
Europe/Berlin Zeitzone

Physical Model of the Performance of Avalanche Photodiodes with Single Photoelectron Detection

Nicht eingeplant
25m
Palais Hirsch, Schwetzingen

Palais Hirsch, Schwetzingen

Schlossplatz, 2 68723 Schwetzingen ‎
Poster Electrical Properties

Sprecher

Herr Farid Ahmadov (ANAS)

Beschreibung

A new physical model of avalanche process with single photon detection capabilities is presented in various Geiger mode photodiodes. The model describes development of avalanche process in time, taking into account the space charge resistance as well as the change of electric field in the avalanche region caused by internal discharge and external recharge currents. Results of simulations are compared with experimental data received with Geiger mode photodiodes from different suppliers. It was found that at fixed over-voltage the signal gain is reduced significantly depending on the space charge resistance. The relative value of the reduction in signal gain depends on the pixel capacitance. The possibilities of improving the parameters of avalanche photodiodes are discussed widely in this work.

Hauptautor

Herr Farid Ahmadov (ANAS)

Co-Autoren

Herr Azer Sadigov (National Nuclear Research Center) Dr. Fatali Abdullayev (Institute of Radiation Problems- Administrative Department of ANAS, Baku, Azerbaijan) Dr. Gadir Ahmadov (NNRC-JINR) Dr. Ziraddin Sadygov (JINR-NNRC)

Präsentationsmaterialien