26 January 2020 to 1 February 2020
Europe/Berlin timezone

Two-dimensional energy and carrier diffusion in silicon upon X-ray irradiation or swift heavy ion impact

30 Jan 2020, 17:30


Waldemar-Petersen-Haus Oberseitestraße 38 A-6992 Hirschegg/Kleinwalsertal


Dr Vladimir Lipp (CFEL, DESY)


We present the dynamics of carrier density and carrier/atomic energy in silicon after its excitation by an X-ray laser or swift heavy ion in two-dimensional geometry. The dynamics is modeled using the so-called nTTM model, i.e., a system of three coupled partial differential equations: one for carrier ambipolar diffusion and two coupled diffusion equations for carriers and phonons. To solve this system, we utilize a finite-difference integration algorithm based on Alternating Direction Implicit method with additional predictor-corrector algorithm, which takes care of the nonlinearities. After a detailed description of the method, we show its first results and discuss possible applications. Extension to three dimensions is also discussed.

Primary author

Dr Vladimir Lipp (CFEL, DESY)


Prof. Beata Ziaja (DESY)

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