8.–11. Mai 2023
Burghotel Staufenberg, Giessen, Germany
Europe/Berlin Zeitzone

Sitzung

Posters

08.05.2023, 18:00
(Burghotel Staufenberg, Giessen, Germany)

Burghotel Staufenberg, Giessen, Germany

Präsentationsmaterialien

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  1. Herr Sourav Bhakta (National Institute of Science Education and Research)
    08.05.23, 18:02
    Poster

    Ion implantation is a well-known and popular method to study the significant modification in electrical, structural, magnetic, and optical properties in insulators and semiconductors to apply in various industrial developments. The Au ion implantation in transition metal oxide (NiO) can produce a different kind of vacancy and substitutional defects in the matrix that can modify the magnetic...

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  2. Nazarena Tortorelli
    08.05.23, 18:06
    Poster

    In the Fragment Separator (FRS) at GSI, exotic nuclei are produced by projectile fragmentation and fission at relativistic energies, separated in-flight and range-bunched. For many experiments the nuclei have to be slowed down from relativistic energies to a few eV and thermalized. At the FRS Ion Catcher experiment, this is realized with a cryogenic gas-filled stopping cell (CSC). After the...

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  3. Alexandru State
    Poster

    A. State1, D.L. Balabanski1, P. Constantin1, M. Cuciuc1, A.

    The High Areal Orthogonal Extraction Cryogenic Stopping Cell (HADO-CSC) represents a state of
    the art ion catcher design, used for the formation of radioactive ion beams (RIBs). It has a two-chamber
    design, leading to a faster estimated extraction when compared to existing ion catchers[1]. It uses Helium
    at cryogenic...

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  4. Frau Rakhi (Indian Institute of Technology Ropar, 140001, Punjab, India)
    Poster

    The dynamic of self-organized nanopatterns on solid surfaces has been studied using low energy ion beam but it remains a central theme within ion beam sputtering still [1-4]. The previous work for dynamical characterization has been focused on ion sputtering using unconventional methods [2, 3].
    We investigated morphology evolution of 500 eV Ar+ sputtered Si surfaces at an incidence of 67˚...

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