International Conference on the Advancement of Silicon Photomultipliers

Name: International Conference on the Advancement of Silicon Photomultipliers
Start: 2018-06-11T09:00:00+02:00
End: 2018-06-15T13:20:00+02:00
Location: Palais Hirsch, Schwetzingen

11.–15. Juni 2018

Palais Hirsch, Schwetzingen

Europe/Berlin Zeitzone

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Sitzung

Radiation Hardness

14.06.2018, 09:00

Palais Hirsch, Schwetzingen

Schlossplatz, 2 68723 Schwetzingen ‎

Radiation Hardness

Erika Garutti (Hamburg University)

Radiation Hardness

Erika Garutti (Hamburg University)

Es gibt derzeit keine Materialien.

74. Radiation Hardness Introduction

Thomas Tsang (BNL)

14.06.18, 09:00

Radiation Hardness

24. Neutron Radiation and Recovery Studies on SiPMs

Thomas Tsang (BNL)

14.06.18, 09:10

Radiation Hardness

Talk

SiPM lost its performance characteristics when exposed to high dose of neutrons. However, the distinct hallmark of SiPMs, low dark count and excellent photon-number-resolving capability, can be recovered by thermal annealing. Several Hamamatsu and FBK series SiPMs are characterized before and after exposure of up to 1010 neutron/cm2 dosage using a 14 MeV neutron generation source. ...

15. Study of Evolution of MPPC Properties Induced by Neutrons

Dr. Slawomir Mianowski (National Centre for Nuclear Research)

14.06.18, 09:50

Radiation Hardness

Talk

During my talk I would like to show and discuss results of evolution of MPPC properties during irradiation by neutrons. Two models of Multi-Pixel Photon Counters: S13360-3050CS and S13360-6050CS from Hamamatsu with different size (3x3 mm

^{- 2}

and 6x6 mm

^{- 2}

, respectively) and the same subpixel pitch size (50

μ m

) were irradiated by neutrons from two sources: PuBe source with...

4. Assessment of Photodetection Performance of Analog and Digital SiPMs Exposed to Cold Neutrons

Prof. Daniel Durini Romero (FZ Jülich / INAOE)

14.06.18, 10:10

Radiation Hardness

Talk

Small Angle Neutron Scattering (SANS) technique uses cold or thermal neutrons for investigation of soft and condensed matter. Significant developments in microelectronics enabled the use of scintillation-based pixelated neutron detectors that exploit Silicon Photomultipliers (SiPM) for detecting visible light generated within a scintillator, in our case a 1 mm thick Ce-doped 6Li-glass [1]. We...

61. Effects of Neutron and Gamma Radiation on SiPMs

Herr Sean Stoll (BNL)

14.06.18, 10:50

Radiation Hardness

Talk

The effects of radiation damage in SiPMs from gamma rays has been measured and compared with the damage produced by neutrons. SiPMs were exposed to 60Co gamma rays at the Solid State Gamma-Ray Irradiation Facility at Brookhaven National Lab and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to more than 1 Mrad and the neutron...

55. Characterization of Radiation Damaged SiPMs

Prof. Robert Klanner (Hamburg University)

14.06.18, 11:10

Radiation Hardness

Talk

SiPMs with 4384 pixels of 15 µm x 15 µm produced by KETEK have been irradiated with reactor neutrons to fluences between 10^9 and 5 10^14 cm-2. After the irradiation C-V, I-V, and current transients with and without pulsed light have been performed at +20°C and –30°C. No annealing, in addition to the annealing during the transport and the measurements, has been applied. Outside of the...

75. Radiation Hardness Discussion & Summary

Thomas Tsang (BNL)

14.06.18, 11:30

Radiation Hardness

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International Conference on the Advancement of Silicon Photomultipliers

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Radiation Hardness

Palais Hirsch, Schwetzingen

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Radiation Hardness

Radiation Hardness

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International Conference on the Advancement of Silicon Photomultipliers

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Vorsitzende der Sitzung

Radiation Hardness

Radiation Hardness

Präsentationsmaterialien