Speaker
Description
We present a compact laser setup for investigating single-event-effects in semiconductors. In the presentation, we give an overview, how we used the setup for beamtime-preparation at GSI-microprobe with SuperJunction MOSFETs and microcontrollers as well as an overview of further use-cases.
The developed pulse-laser-setup uses an optical pick-up-unit of a DVD-writer including laserdiodes with 650 nm and 780 nm. A laser pulse-width in the range of 1-20 ns with an positioning accuracy below 250 nm is used for the investigations. For testing the test-setup of MOSFETs, the setup has been used to penetrate non-metalized border-areas of these devices to inject charges. So, the signal-chain could be optimized. Besides that, we developed a method to access the active structures of these fully top-side-metallized devices to investigate charge-injectin by laser-pulses. With microcontrollers, we use the setup for analyzing the parts-behaviour in case of single-event-latchups (SEL) and single-event-upsets (SEU). During our scans with the GSI-microprobe, we confirmed a similar behaviour of the previously laser-scanned parts. So, we found a spot with the laser in an ATtiny20, where it can be destroyed quickly by SEL and the timings are similar with ions. Another spot in this device is a location, where the Flash-memory can be erased with a single laser-pulse. This feature could also be confirmed with ions. SEL-mappings show many similar susceptible regions, with differences due to metallization and penetration-depth-dependencies.