Speaker
Description
The use of fast-timing radiation-resistant materials, e.g. diamond [1-3] or silicon [4], which will survive to the FAIR beam rates longer than plastics (typically lifetime of 1 week) has being investigated in the last decade using SIS18 ion beams produced at GSI. Despite the excellent results obtained, none of these options was suitable to cover an active area of 400x100 mm^2 for detecting radioactive ion beams to be produced at at FAIR.
On one side, high-quality radiation-hard sensors with an active area larger than 40x40 mm^2 are still not easily produced. In addition, a system with few ps timing resolutions would require a highly electrode segmentation of the sensors and then thousands of electronics channels.
New detector technology based on SiC material has been recently investigated for future GSI/FAIR applications. Two small thin SiC samples [5] were tested for the first time with 238U beams at different energies ranging from 300 up to 900 MeV/u. Successively, a thicker detector (100um) made of the same material (H4-SiC) was irradiated with 12C and 16O beams at 200-300 MeV/u at HIT in comparison to a single-crystal diamond detector.
The performed measurements and the achieved results will be discussed.
[1] F. Schirru et al., J. Phys. D: Appl. Phys. 49 (2016) 215105
[2] S. Schlemme et al., Diam. Relat. Mater. 99 (2019) 107536
[3] M. Alfonsi et al., JINST 19 (2024) C05009
[4] V. Eremin et al., JINST 12 (2017) C03001
[5] S. Tudisco et al., Sensors 2018, 18, 2289