Detector Seminar - R&D activities on monolithic pixel detectors in TPSCo 65 nm technology

In 2020 CERN has made the strategic decision to explore the potential of the 65nm TPSCo CMOS technology for future particle detector upgrades. The primary goal of this transition was to leverage the advanced capabilities of this technology in terms of radiation tolerance, power efficiency, and integration density, which are critical for high-energy physics experiments, which was done within the CERN EP R&D WP1.2 framework.

To date, there have been three submissions within the framework of this investigation. They have resulted in the development of numerous test structures designed to evaluate the detection capabilities of the technology and to develop fundamental building blocks for future detector readout systems. Starting with test chiplets to validate the technology, the first wafer-scale monolithic detectors prototypes have been fabricated and extensively tested.

The results obtained so far have been very promising. The tests conducted on these structures have demonstrated improved performance, validating the decision to adopt the 65 nm imaging CMOS technology for future detector upgrades. As a result, CERN has officially decided to use this technology for the upcoming upgrade of the ALICE Inner Tracking System (ITS3).

In this presentation, I will provide an overview of fabricated test structures with the key measurements results obtained so far. I will also present current status of research, focusing on the wafer scale monolithic pixel detector MOSAIX that is being developed for the ALICE ITS3 upgrade.