SHIM 2015 Swift Heavy Ions in Matter

AlN, GaN and InN were irradiated at room temperature with monatomic Swift Heavy Ions and high energy fullerenes. Despite a common crystallographic structure, these compounds show much contrasted response towards the electronic energy deposition. Transmission Electron Microscopy in both plane-view and cross-sectional modes is used to characterize ion tracks. AlN shows a remarkable resistance...

We exposed nitrogen-implanted diamonds to beams of swift heavy ions (1 GeV, 4MeV/u) and find that these irradiations lead directly to the formation of nitrogen vacancy (NV) centers, without thermal annealing. We compare the photoluminescence intensities of swift heavy ion activated NV centers to those formed by irradiation with low-energy electrons and by thermal annealing. NV yields from...

Swift heavy ion (SHI) irradiation leads to formation of narrow ion tracks in many materials, can be used in modifying nanomaterials, and in some materials with existing damage induces defect recovery. Molecular Dynamics (MD) simulations, which include the energy deposition from electronic stopping following the inelastic thermal spike calculation input, can show the time evolution of these...

This contribution discusses recent results on the recrystallization effect [1,2] induced by swift heavy ions (SHI) in pre-damaged silicon carbide. The recrystallization kinetics was followed by using increasing SHI fluences and by starting from different levels of initial damage within the SiC samples. The quantitative analysis of these data shows that the recrystallization rate depends...