18.–21. Mai 2015
Darmstadt, Germany
Europe/Berlin Zeitzone

In-Situ SEM-Investigation of SHI induced Modification of Surfaces and Thin Films

21.05.2015, 12:30
20m
Darmstadtium (Darmstadt, Germany)

Darmstadtium

Darmstadt, Germany

Oral 05 - Insulators Session 11

Sprecher

Prof. Wolfgang Bolse (Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany)

Beschreibung

We are running a High Resolution Scanning Electron Microscope in the beam line of the UNILAC ion accelerator at the GSI Helmholtz Centre for Heavy Ion Research in Darmstadt, Germany, which has recently been extended also with an EDX-system and two micro-manipulators. This instrument allows us to in-situ investigate the structural and compositional development of individual objects and structures in the um- and nm-range under swift heavy ion bombardment, from the very first ion impact up to high fluences of the order of several 10^15 / cm^2. The sample under investigation is irradiated in small fluence steps and in between SEM-images (and EDX-scans) of one and the same surface area are taken. The irradiation can be carried out at any incidence angle between 0 and 90 degree and also under stepwise or continuous azimuthal rotation of the sample. The micro-manipulator system allows us to perform additional analysis like electrical and mechanical characterization as well as substrate-free EDX at sub-um objects. We are now also able to irradiate almost free standing sub-um structures (pasted on a nanoscale tip or held in micro-tweezers). In this report an overview over this unique instrument and its capabilities and advantages will be given, illustrated by the results of our recent in-situ studies on ion induced modification of thin films (dewetting and self-organisation) and on shaping of sub-um objects with swift heavy ions (by taking advantage of ion sputtering, ion hammering and ion induced visco-elastic flow).

Autor

Prof. Wolfgang Bolse (Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany)

Co-Autoren

Frau Barbara Widmann (Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany) Herr Daniel Garmatter (Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany) Herr Knut Dautel (Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany) Herr Martin Bauer (Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany) Herr Mazhar Asdi (Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany) Herr Michael Haag (Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany) Dr. Neelabh Srivastava (Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany) Herr Redi Ferhati (Institut für Halbeiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Germany) Dr. Sankarakumar Amirthapandian (Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, India)

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