Speaker
Description
Group-IV superconducting semiconductors present promising opportunities on the development of scalable hybrid platforms for quantum devices. However, achieving superconducting states in semiconductors remains challenging, particularly concerning the origin of coherent coupling and the relationship between carrier concentration and critical temperature. In this study, ion implantation and flash-lamp annealing are used to achieve hyper-doped SiGe1 alloys. We systematic investigate the tunability of the superconducting transition temperature by adjusting the Si/Ge composition and the Ga implantation fluences. As the Si concentration in SiGe increases, while maintaining identical doping fluences, the critical temperature is reduced from 550 mK to 40 mK. This is due to the lower solubility of Ga in Si than in Ge. Furthermore, as the Ga fluence decreases, the critical temperature is also reduced from 550 mK to 80 mK. All results indicate a modulation of superconductivity in diluted SiGe by carrier concentration. We establish a qualitative correlation between critical temperature and free-hole concentration, which can be tuned by varying the Ga implantation fluence and the SiGe alloy composition.
