40th International Workshop on High Energy Density Physics with Intense Ion and Laser Beams

We present the dynamics of carrier density and carrier/atomic energy in silicon after its excitation by an X-ray laser or swift heavy ion in two-dimensional geometry. The dynamics is modeled using the so-called nTTM model, i.e., a system of three coupled partial differential equations: one for carrier ambipolar diffusion and two coupled diffusion equations for carriers and phonons. To solve this system, we utilize a finite-difference integration algorithm based on Alternating Direction Implicit method with additional predictor-corrector algorithm, which takes care of the nonlinearities. After a detailed description of the method, we show its first results and discuss possible applications. Extension to three dimensions is also discussed.