International Conference on the Advancement of Silicon Photomultipliers

A new physical model of avalanche process with single photon detection capabilities is presented in various Geiger mode photodiodes. The model describes development of avalanche process in time, taking into account the space charge resistance as well as the change of electric field in the avalanche region caused by internal discharge and external recharge currents. Results of simulations are compared with experimental data received with Geiger mode photodiodes from different suppliers. It was found that at fixed over-voltage the signal gain is reduced significantly depending on the space charge resistance. The relative value of the reduction in signal gain depends on the pixel capacitance. The possibilities of improving the parameters of avalanche photodiodes are discussed widely in this work.