11-15 June 2018
Palais Hirsch, Schwetzingen
Europe/Berlin timezone

Electric Fields in the SiPM Active Volume by Volt-Farad Characteristics Analysis

Not scheduled
25m
Palais Hirsch, Schwetzingen

Palais Hirsch, Schwetzingen

Schlossplatz, 2 68723 Schwetzingen ‎
Poster Electrical Properties

Speaker

Dr Vassily Kushpil (NPI of ASCR)

Description

The aim of this study is to understand a changing of SiPM structure after irradiation. We compared profile of electric field in SiPM (KETEK) active region for ten not-irradiated and irradiated detectors. Standard method of measurement of C-V characteristics was applied using two configurations (serial and parallel circuit) to exclude an influence of the serial resistance. Dependencies of capacitance on frequency was studied in range from 10 to 1000 KHz. For non irradiated detectors we detected in CV characteristics local instability basically connected with accumulation of charge on boundary optical isolator-silicon. Also hysteresis of C-V characteristics was detected. For irradiated detectors also local instability was visible, but hysteresis of C-V characteristics was not detected. The results demonstrate that applied method can be used for relative analysis how SiPM active region properties changed after irradiation.

Primary author

Dr Vassily Kushpil (NPI of ASCR)

Co-authors

Dr Andrej Kugler (Nuclear Physics Institute CAS) Dr Svetlana Kushpil (NPI of ASCR)

Presentation Materials

There are no materials yet.